A Simple and Scalable Graphene Patterning Method and Its Application in CdSe Nanobelt/Graphene Schottky Junction Solar Cells

摘要

We develop a simple and scalable graphene patterning method usingelectron-beam or ultraviolet lithography followed by a lift-off process. Thismethod, with the merits of: high pattern resolution and high alignmentaccuracy, free from additional etching or harsh process, universal to arbitrarysubstrates, compatible to Si microelectronic technology, can be easily appliedto diverse graphene-based devices, especially in array-based applications,where large-scale graphene patterns are desired. We have applied this method tofabricate CdSe nanobelt (NB)/graphene Schottky junction solar cells, which havepotential application in integrated nano-optoelectronic systems. Typicalas-fabricated solar cell shows excellent photovoltaic behavior with anopen-circuit voltage of ~ 0.51 V, a short-circuit current density of ~ 5.75mA/cm2, and an energy conversion efficiency of ~1.25%. We attribute the highperformance of the cell to the as-patterned high-performance graphene, whichcan form an ideal Schottky contact with CdSe NB. Our results suggest both thedeveloped graphene patterning method and the as-fabricated CdSe nanobelt(NB)/graphene Schottky junction solar cells have reachable applicationprospect.